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S/D implant製程有什麼該注意的特性?

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icbee - 半导体制程整合工程师
擅长:制程整合工程师

Ans

(1)The issue of shallow junction: lower thermal budget, low energy, higher dosage are used. 

(2)In PMOS, Boron is too light for sub-micron devices, BF2 are used instead.

(3)S/D implant would cause substrate damage, additional annealing stage is required to reduce junction leakage.(~600C to anneal damage, raise to 850~900C to activate impurity) 

(4)Implant uniformity, temperature control, surface charging effects need to be controlled. 

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  • asd 提出于 2018-08-25 07:32

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