polysilicon gate多晶硅栅极简称poly gate,就是MOS管用多晶硅做栅极,用氧化硅做绝缘层,gate poly应该是指做栅极的多晶硅材料
回答于 2018-09-16 22:19
Ans Remove Si surface particles, metal Ion, organic, micro-roughness and native Oxide. Use 22220A, where SPM (CR) 1min to remove light organic, 100:1 HF 3min to remove any native oxide, and APM 7min to enhance particle remove and Si surface metal ion stripping capability, HPM 3min to remove hea...
回答于 2018-08-25 17:54
目前Wet bench dry方法: 9 O$ p2 l4 }- Z/ U答:(1) Spin Dryer (2) Marangoni dry (3) IPA Vapor Dry : x! r; K5 U, C1 X何谓 Spin Dryer 答:利用离心力将晶圆表面的水份去除何谓 Maragoni Dryer 8 u' v7 N5 H/ b' y) F答:利用表面张力将晶圆表面的水份去除何谓 IPA Vapor Dryer 答:利用IPA(异丙醇)和水共溶原理将晶圆...
回答于 2018-08-25 12:18